QS6K1 t r ansistors rev.b 1/3 2.5v drive nch+nch mos fet QS6K1 z s t ru ctu r e silicon n-channel mos fet z f eatu r es 1) low on-resist ance. 2) built-in g-s protection diode. 3) small and surface mount package (t smt 6 ). z a pplic a t ion pow e r sw itching, dc / dc converter . z ex te rna l dime ns ions (unit : mm) each lead has same dimensions tsmt6 0.4 (1) (5) (3) (6) (2) (4) 1pin mark 2.8 1.6 1.9 2.9 0.95 0.95 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 abbreviated symbol : k01 z packag in g sp ecificatio n s package code taping basic ordering unit (pieces) QS6K1 tr 3000 type z a b solute maximum ratings (t a= 25 c) < it is the same ratings for the t r 1 and t r 2> ? 1 ? 1 ? 2 parameter v v dss symbol 30 v v gss 12 a i d a i dp a i s a i sp w / total p d c tch 150 c tstg ? 55 to + 150 limits unit drain-source voltage gate-source voltage drain current total power dissipation (t c = 25 c) channel temperature storage temperature continuous pulsed continuous source current (body diode) pulsed ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board 1.0 4.0 0.8 4.0 1.25 w / element 0.9 z equiv a le nt c i rc uit (1) tr1 gate (2) tr2 source (3) tr2 gate (4) tr2 drain (5) tr1 source (6) tr1 drain ? 1 esd protection diode ? 2 body diode (1) ? 1 ? 2 ? 2 ? 1 (6) (4) (5) (1) (3) (2) (2) (3) (6) (5) (4) ? a protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. use the protection circuit when the fixed voltages are exceeded. z t h e rmal resist an ce c / w / total rth (ch-a) 100 parameter symbol limits unit channel to ambient c / w / element 139 ? ? mounted on a ceramic board
QS6K1 t r ansistors rev.b 2/3 z electrical ch aracteristics (t a= 25 c) < it is the same characteristics for the t r 1 and t r 2> parameter symbol i gss y fs min. ? typ. max. unit conditions gate-source leakage v (br) dss 30 drain-source breakdown voltage i dss ? zero gate voltage drain current v gs (th) 0.5 gate threshold voltage ? static drain-source on-state resistance r ds (on) ? forward transfer admittance ? input capacitance 1.0 output capacitance c iss ? reverse transfer capacitance c oss ? turn-on delay time c rss ? rise time t d (on) ? turn-off delay time t r ? fall time t d (off) ? total gate charge t f ? gate-source charge q g ? gate-drain charge q gs ? q gd ? ? pulsed ? ? ? ? ? ? ? ? ? ? 10 av gs = 12v, v ds = 0v v dd 15v ?? vi d = 1ma, v gs = 0v ? 1 av ds = 30v, v gs = 0v ? 1.5 v v ds = 10v, i d = 1ma 170 2 3 8 i d = 1.0a, v gs = 4.5v 180 2 5 2 m ? i d = 1.0a, v gs = 4.0v 260 3 6 4 i d = 1.0a, v gs = 2.5v ?? si d = 1.0a, v ds = 10v 77 ? pf v ds = 10v 25 15 ? pf v gs = 0v 7 ? pf f = 1mhz v gs = 4.5v r l = 30.0 ? r g = 10 ? 7 ? ns 15 ? ns 6 ? ns 1.7 ? ns 0.4 2.4 nc 0.4 ? nc v gs = 4.5v ? nc i d = 1.0a i d = 500ma, v dd 15v z bo d y d i o d e ch aracteristics (source-drain) (t a= 25 c) < it is the same characteristics for the t r 1 and t r 2> forward voltage v sd ?? 1.2 v i s = 3.2a, v gs = 0v parameter symbol min. typ. max. unit conditions ? pulsed ?
QS6K1 t r ansistors rev.b 3/3 z electrical ch aracteristic cu rv es 0.01 0.1 1 1 0 100 drain-source voltage : v ds (v) 1 capacitance : c (pf) 100 1000 10 ta = 25 c f = 1mhz v gs = 0v fig.1 typical capacitance vs. drain-source voltage c iss c oss c rss 0.01 0.1 1 1 0 drain current : i d (a) 1 10 100 switching time : t (ns) 1000 fig.2 switching characteristics ta = 25 c v dd = 15v v gs = 4.5v r g = 10 ? pulsed t r t f t d (off) t d (on) 012 total gate charge : qg (nc) 0 1 2 3 4 5 6 7 8 gate-source voltage : v gs (v) 3 ta = 25 c v dd = 15v i d = 1a r g = 10 ? pulsed fig.3 dynamic input characteristics 0.0 0.5 1.0 1.5 2.0 gate-source voltage : v gs (v) 10 0.001 0.01 0.1 1 drain current : i d (a) fig.4 typical transfer characteristics v ds = 10v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 02468 1 0 1 2 1 4 1 gate-source voltage : v gs (v) 0 100 200 300 400 500 600 700 static drain-source on-state resistance : r ds (on) ( m ? ) fig.5 static drain-source on-state resistance vs. gate-source voltage 6 i d = 1a i d = 0.5a ta = 25 c pulsed 0.0 0.5 1.0 1.5 source-drain voltage : v sd (v) 0.01 0.1 1 10 source current : i s (a) fig.6 source current vs. source-drain voltage v gs = 0v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 0.01 0.1 1 1 0 drain current : i d (a) 100 1000 10000 static drain-source on-state resistance : r ds (on) ( m ? ) fig.7 static drain-source on-state resistance vs. drain current ( ) ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v gs = 4.5v pulsed drain current : i d (a) static drain-source on-state resistance : r ds (on) ( m ? ) fig.8 static drain-source on-state resistance vs. drain current ( ? ) 0.01 0.1 1 1 0 100 1000 10000 ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v gs = 4v pulsed drain current : i d (a) static drain-source on-state resistance : r ds (on) ( m ? ) fig.9 static drain-source on-state resistance vs. drain current ( ?? ) 0.01 0.1 1 1 0 100 1000 10000 ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v gs = 2.5v pulsed
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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